Controllo dell’invecchiamento dei transistor di potenza

Controllo dell’invecchiamento dei transistor di potenza

Douha Othmen / Stéphane Lefebvre / Tarek Ben Salah

90,75 €
IVA incluido
Disponible
Editorial:
KS OmniScriptum Publishing
Año de edición:
2025
ISBN:
9786208939472
90,75 €
IVA incluido
Disponible

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Sobre IBD

Questo libro presenta uno studio sperimentale approfondito sul comportamento dei transistor SiC JFET per applicazioni aerospaziali complesse. Viene descritta una metodologia completa, che comprende la progettazione di un banco di prova automatizzato utilizzando LabView, test di robustezza per determinare l’energia critica e test di invecchiamento accelerato per monitorare i cambiamenti dei parametri elettrici. I risultati evidenziano indicatori di degrado affidabili e aprono interessanti prospettive per la progettazione di sistemi elettronici più resistenti in ambienti estremi.

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