Controlling the aging of power transistors

Controlling the aging of power transistors

Douha Othmen / Stéphane Lefebvre / Tarek Ben Salah

90,75 €
IVA incluido
Disponible
Editorial:
KS OmniScriptum Publishing
Año de edición:
2025
ISBN:
9786208939458
90,75 €
IVA incluido
Disponible

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Sobre IBD

This book presents an in-depth experimental study of the behavior of SiC JFET transistors for demanding aerospace applications. A complete methodology is described, including the design of an automated test bench via LabView, robustness tests to determine the critical energy, and accelerated aging tests to monitor the evolution of electrical parameters. The results obtained highlight reliable degradation indicators and open up interesting prospects for the design of more resistant electronic systems in extreme environments.

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