Os fundamentos do MOSFET HOI de três camadas em regime nano

Os fundamentos do MOSFET HOI de três camadas em regime nano

Lalthanpuii Khiangte / Rudra Sankar Dhar

72,47 €
IVA incluido
Disponible
Editorial:
KS OmniScriptum Publishing
Año de edición:
2026
ISBN:
9786209855757
72,47 €
IVA incluido
Disponible

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Sobre IBD

Este livro centra-se no desenvolvimento de uma nova estrutura que pode ser incorporada para formar um dispositivo com duas camadas de Si deformadas na região do canal, formando um sistema nano-MOS de canal deformado de três camadas sobre isolador (HOI), que pode ser implementado para formar um NanoFET. O canal heteroestruturado baseado em NanoFET constituído por camadas duplas de Si deformadas enriquecidas em mobilidade, intercaladas com SiGe deformado, aumenta significativamente a mobilidade dos electrões em comparação com o dispositivo convencional de s-Si em MOSFET de canal SiGe relaxado, conduzindo a um melhor desempenho do dispositivo sem implementar qualquer escala adicional.

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