LIBROS DEL AUTOR: rudra sankar dhar

13 resultados para LIBROS DEL AUTOR: rudra sankar dhar

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  • Tri-layered Heterostructure-On-Insulator System for FET at Nano Regime
    Lalthanpuii Khiangte / Rudra Sankar Dhar
    The book discusses the development of new structure in Nanomaterial system with a 3-layered heterostructure technology system for implementation in MOS devices. A strained channel system technology is developed and initiated with layers such as strained-Si/strained-SiGe/strained-Si at the molecular level with detailed study and analysis of strain effect for the Type-II band-ali...
    Disponible

    100,14 €

  • Design and Modelling of Nanostructured Junctionless GAA FETs
    Jeevanarao Batakala / Rudra Sankar Dhar
    The book presents the design and modelling of Junctionless Semiconductor Gate-All-Around FETs developed using compound Semiconductors. The devices are designed with varying gate lengths from 20nm down to 10nm. The work mostly focuses on III-V semiconductors especially for trinary compounds such as InGaAs, InGaN and InGaP Nanowires. Electrical Parametric analysis is carried out ...
    Disponible

    113,12 €

  • Efficient Solar Cell Design and Optimisation Techniques
    Dickson Warepam / Khomdram Jolson Singh / Rudra Sankar Dhar
    This book discusses the novel designs for high-efficiency solar cells, focusing on parameter extraction, performance enhancement, and optimization across multiple advanced photovoltaic technologies. It introduces a GaSb-based nanowire infrared solar cell capable of efficiently harvesting the infrared spectrum under 100 suns illumination. A comprehensive electrical model for dye...
    Disponible

    113,09 €

  • Photovoltaic Device Design and Development for Performance Enhancement
    Khomdram Jolson Singh / L. Kholee Phimu / Rudra Sankar Dhar
    This book deliberates a comprehensive understanding into the design, modelling, and performance enhancement of next-generation photovoltaic devices. The book systematically optimizes antireflection layer materials and thicknesses, demonstrating that ZnO material achieves a superior power conversion efficiency in contrast to other existing options due to its exceptional refracti...
    Disponible

    114,45 €

  • Fundamentals of Solar Photovoltaic Device Design and Development
    Khomdram Jolson Singh / Rudra Sankar Dhar / Shingmila Hungyo
    The book discusses the development and performance analysis of Multi-junction and Multiple Quantum Well Solar Cells including works on Graphene based solar technology. A high-efficiency solar cell is potentially developed by having several Indium Gallium Nitride junctions or quantum wells. With the increase in the numbers of QW periods to 20 periods, the photovoltaic parameters...
    Disponible

    114,50 €

  • Heterostructured Triple Strained DG FET for Nanotechnology
    Kuleen Kumar / Rudra Sankar Dhar
    The book discusses the development and performance analysis of double gate strained-heterostructured-on-insulator FET for various technology nodes. Initially a 22nm channel length based FET incorporating the tri-layered strained system technology for the channel region is incorporated. This institutes ultrathin layers coagulating probable quantum carrier confinement, but to mee...
    Disponible

    115,73 €

  • Principes fondamentaux du MOSFET HOI à trois couches en régime nanométrique
    Lalthanpuii Khiangte / Rudra Sankar Dhar
    Ce livre se concentre sur le développement d’une nouvelle structure qui peut être utilisée en entreprise pour former un dispositif avec deux couches de Si déformées dans la région du canal formant un système nano-MOS à canal déformé tri-couche sur isolant (HOI), qui peut être mis en œuvre pour former un NanoFET. Le canal à hétérostructure basé sur le NanoFET, constitué de couch...
    Disponible

    73,77 €

  • Die Grundlagen von dreischichtigen HOI-MOSFETs im Nanobereich
    Lalthanpuii Khiangte / Rudra Sankar Dhar
    Dieses Buch konzentriert sich auf die Entwicklung einer neuartigen Struktur, mit der ein Bauelement mit zwei verspannten Si-Schichten im Kanalbereich gebildet werden kann, das ein dreischichtiges Nano-MOS-System mit verspannter Kanal-Heterostruktur auf Isolator (HOI) bildet, das zur Bildung eines NanoFET eingesetzt werden kann. Der auf NanoFET basierende Heterostrukturkanal, de...
    Disponible

    99,90 €

  • I fondamenti del MOSFET HOI a tre strati in regime nanometrico
    Lalthanpuii Khiangte / Rudra Sankar Dhar
    Questo libro si concentra sullo sviluppo di una struttura innovativa che può essere utilizzata per formare un dispositivo con due strati di Si teso nella regione del canale, formando un sistema nano-MOS a canale teso a tre strati su isolante (HOI), che può essere implementato per formare un NanoFET. L’eterostruttura di canale basata su NanoFET, costituita da doppi strati di Si ...
    Disponible

    72,47 €

  • Podstawy trójwarstwowych tranzystorów MOSFET HOI w nano-reżimie
    Lalthanpuii Khiangte / Rudra Sankar Dhar
    Niniejsza książka koncentruje się na opracowaniu nowatorskiej struktury, która może być stosowana w korporacjach do tworzenia urządzeń z dwiema naprężonymi warstwami Si w obszarze kanału, tworząc trójwarstwową naprężoną heterostrukturę kanału na izolatorze (HOI) nano-MOS, która może być zaimplementowana w celu utworzenia NanoFET. Kanał heterostrukturalny oparty na NanoFET skład...
    Disponible

    72,47 €

  • Os fundamentos do MOSFET HOI de três camadas em regime nano
    Lalthanpuii Khiangte / Rudra Sankar Dhar
    Este livro centra-se no desenvolvimento de uma nova estrutura que pode ser incorporada para formar um dispositivo com duas camadas de Si deformadas na região do canal, formando um sistema nano-MOS de canal deformado de três camadas sobre isolador (HOI), que pode ser implementado para formar um NanoFET. O canal heteroestruturado baseado em NanoFET constituído por camadas duplas ...
    Disponible

    72,47 €

  • The Fundamentals Of Tri-layered HOI MOSFET In Nano Regime
    Lalthanpuii Khiangte / Rudra Sankar Dhar
    This book focuses in the development of a novel structure that can be in corporate to form a device with two strained Si layers in the channel region forming tri-layered strained channel heterostructure on insulator (HOI) nano-MOS system, which can be implemented to form a NanoFET. The heterostructure channel based on NanoFET consisting of mobility enriched double strained Si l...
    Disponible

    91,01 €

  • Charge Plasma Induced Double Gate TFET as Biosensor
    Dipshika Das / Pradip Kumar Ghosh / Rudra Sankar Dhar
    This book presents a groundbreaking Dual Metal Double Gate Tunnel Field Effect Transistor (DM DG TFET) featuring a laterally divided dielectric gate oxide structure with a tunneling and auxiliary gate. By engineering gate oxides and work functions, the device achieves a sub-threshold swing below 90 mV/decade, high current ratio, and ultra-low OFF current. It explores the role o...
    Disponible

    118,23 €