Modelação de dispositivos e caraterização de dispositivos híbridos

Modelação de dispositivos e caraterização de dispositivos híbridos

Ajaykumar Dharmireddy / Sreenivasa rao Ijjada

83,64 €
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Editorial:
KS OmniScriptum Publishing
Año de edición:
2024
ISBN:
9786208321147
83,64 €
IVA incluido
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Sobre IBD

Nos circuitos electrónicos de baixa potência e alta velocidade, são necessários dispositivos com caraterísticas mais acentuadas. A velocidade do dispositivo aumenta com caraterísticas IV mais acentuadas, e a baixa potência é conseguida através do funcionamento do dispositivo na região sublimiar. A medição de correntes na região do sublimiar é um grande desafio. Para conseguir uma comutação elevada, é necessário propor um novo dispositivo com as vantagens combinadas do FinFET e do TFET. Esta tese propõe um dispositivo híbrido com um valor SS < 25 mV/Dec. O Synopsis Centaurus TCAD é utilizado nesta tese para a modelação e caraterização do dispositivo.

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