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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Jin Cheng Zhang / Jin Feng Zhang / Yue Hao

87,33 €
IVA incluido
Disponible
Editorial:
Taylor & Francis Ltd
Año de edición:
2020
Materia
Informática: cuestiones generales
ISBN:
9780367574369
87,33 €
IVA incluido
Disponible

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Sobre IBD

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).

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Otros libros del autor

  • Nitride Wide Bandgap Semiconductor Material and Electronic Devices
    Jin Cheng Zhang / Jin Feng Zhang / Yue Hao
    This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, a...
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