Entwicklung, Design und Analyse von Typ-II-Nanosystemen mit Hetero-Spannung

Entwicklung, Design und Analyse von Typ-II-Nanosystemen mit Hetero-Spannung

Rasmita Barik / Rasmita Dhara

105,33 €
IVA incluido
Disponible
Editorial:
KS OmniScriptum Publishing
Año de edición:
2026
ISBN:
9786209423840
105,33 €
IVA incluido
Disponible

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Sobre IBD

Dieses Buch befasst sich mit der Weiterentwicklung und Analyse von zylindrischen FETs mit verspanntem Kanal und zylindrischem Gate (CGAA - cylindrical gate-all-around). Die Studie untersucht ein Design im Nanomaßstab, das drei ultradünne verspannte Schichten enthält: zwei äußere Schichten aus verspanntem Silizium (s-Si) und eine mittlere Schicht aus verspanntem Silizium-Germanium (s-SiGe), die eine Heterostruktur auf einem Isolator (HOI) innerhalb des CGAA-FETs bilden. Diese verspannten Schichten im Kanal schränken Quantenladungsträger wirksam ein, wodurch die Ladungsträgerbeweglichkeit erhöht und der Schwellenspannungsabfall verringert wird.

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