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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

N. Mohankumar

221,20 €
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Editorial:
Taylor & Francis Ltd
Año de edición:
2021
Materia
Física
ISBN:
9780367554149

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This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

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  • Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
    N. Mohankumar
    This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed. ...
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