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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

N. Mohankumar

91,33 €
IVA incluido
Disponible
Editorial:
Taylor & Francis Ltd
Año de edición:
2023
Materia
Física
ISBN:
9780367554156
91,33 €
IVA incluido
Disponible

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Sobre IBD

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

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Otros libros del autor

  • Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
    N. Mohankumar
    This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed. ...