Stability of IGZO-based Thin-Film Transistor

Stability of IGZO-based Thin-Film Transistor

John Wager / Ken Hoshino

72,88 €
IVA incluido
Disponible
Editorial:
KS OmniScriptum Publishing
Año de edición:
2010
ISBN:
9783838399638
72,88 €
IVA incluido
Disponible

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Sobre IBD

Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.

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