Simulation, Fabrication and Characterization of Advanced MOSFETs

Simulation, Fabrication and Characterization of Advanced MOSFETs

Tsung Ming Chung

97,31 €
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Editorial:
KS OmniScriptum Publishing
Año de edición:
2009
ISBN:
9783639146004
97,31 €
IVA incluido
Disponible

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The evolution of semiconductor has been growing sincethe first transistor was invented in 1900. Theindustry today is a very important market andworldwide sales for the past years has been growingrapidly and is now a multi-billion industry. In theindustry, the main govern by the 'Moore’s rule'. Thislead to the industry answer by the creation ofthe International Roadmap for Semiconductor. In thepast century, semiconductor transistors have movedrapidly and technology nodes have been shrinkingevery two years following Moore’s rule. Materialshave been moving from bulk silicon to Silicon-on-Insulator wafers. In the past few years, technologists have come to a point where they have recognized that this shrinking phenomenon and high demand for the capability of the transistors in the semiconductor industry is coming to a halt if no new design or technology can be found. In order toovercome this halt, various new ideas have beenproposed; among them the use of asymmetrical channeldoping, multiple-gate MOSFETs and Silicon-on-NothingMOSFETs. In this work, an overview of these ideasare presented via means of simulations andmeasurements where possible.

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