Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

 

207,30 €
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Editorial:
Springer Nature B.V.
Año de edición:
2014
ISBN:
9789401784726
207,30 €
IVA incluido
Disponible

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Sobre IBD

1.Introduction and overview. Kevin O’DONNELL, Strathclyde, UK.2.Theoretical background. Robert JONES, Exeter and Benjamin HOURAHINE, Strathclyde, UK.3.In-situ doping of MBE III-N: RE epilayers. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA.4.RE implantation and annealing of III-Nitrides. Katharina LORENZ and Eduardo ALVEZ, ITN Lisbon, Portugal. 5.Lattice location studies of RE impurities in III-Nitrides. Andre VANTOMME, IKS Leuven, Belgium.6.Microscopic characterisation of luminescent III-N:RE epilayers. Robert MARTIN, Strathclyde, UK7.High-resolution optical studies of site multiplicity in III-N:RE. Volkmar DIEROLF, Lehigh, USA. 8.RE-doped III-N quantum dots. Bruno DAUDIN, Grenoble, France.9.Excitation model for RE ions in solids. Alain BRAUD and Pierre RUTERANA, Caen, France.10.III-N:RE electroluminescence. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA.11.RE-doped III-N for spintronics applications. Oliver BRANDT, PDI Berlin, Germany.12.Summary and prospects for future work. Kevin O’DONNELL, Strathclyde, UK.

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