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Microwave High Power High Efficiency GaN Amplifiers for Communication

Microwave High Power High Efficiency GaN Amplifiers for Communication

Subhash Chandra Bera

47,91 €
IVA incluido
Disponible
Editorial:
Springer Nature B.V.
Año de edición:
2022
Materia
Ingeniería de las comunicaciones/las telecomunicaciones
ISBN:
9789811962677
47,91 €
IVA incluido
Disponible

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The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.

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