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Handbook for III-V High Electron Mobility Transistor Technologies

Handbook for III-V High Electron Mobility Transistor Technologies

 

101,04 €
IVA incluido
Disponible
Editorial:
Taylor & Francis Ltd
Año de edición:
2020
Materia
Física
ISBN:
9780367729240
101,04 €
IVA incluido
Disponible

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Sobre IBD

The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.

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