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Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

Yuriy Danylyuk

72,92 €
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Editorial:
KS OmniScriptum Publishing
Año de edición:
2008
Materia
Ciencias de la computación
ISBN:
9783639030280
72,92 €
IVA incluido
Disponible

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Sobre IBD

The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm and In concentration (x) ranging from 0 to 1 on different substrates (Si, Sapphire, SiC glass) using Plasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as the specific film morphology, the self-assembled nanostructures were created. The mechanism of carrier confinement in these structures are described. Theoretically and experimentally shown that the electron localization may exist in the nanostructures by piezoelectric field from AlN buffer layer. Optical investigation of the fundamental bandgap Eg of InxAl1-xN in the temperature range 70-700K and compositional range (0

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