GALLIUM NITRIDE AND SILICON CARBIDE POWER DEVICES

GALLIUM NITRIDE AND SILICON CARBIDE POWER DEVICES

Gallium Nitride and Silicon Carbide Power Devices

B JAYANT BALIGA / BALIGA B JAYANT

134,38 €
IVA incluido
Disponible
Editorial:
World Scientific Publishing Co Pte Ltd
Año de edición:
2016
ISBN:
9789813109407
134,38 €
IVA incluido
Disponible

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Sobre IBD

"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."IEEE Electrical Insulation Magazine During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

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