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Electronic Properties of Semiconductor Interfaces

Electronic Properties of Semiconductor Interfaces

Winfried M. Nch / Winfried Monch

269,25 €
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Editorial:
Springer Nature B.V.
Año de edición:
2010
Materia
Física
ISBN:
9783642057786
269,25 €
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Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

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