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Chemical vapor deposition (CVD) is a very versatile process widely used in the production of thin solid films and surface coating. It is also used to produce powders, fibers and monolithic components. In addition, the majority of chemical elements in the periodic table has been deposited, as well as compounds such as carbides, nitrides, oxides, intermetallic and many others. Chemical vapor deposition has been a critical technology in silicon microelectronics processes, fabrication of thin films of metals, semiconductors, and insulators. With increasing packing density in microelectronic devices, copper is used as an interconnecting metal due to its superior electrical conductivity and excellent resistance against electromigration. One of the advantages of chemcial vapor deposition is that selective deposition onto one surface, often defined as the growth surface, in the presence of another surface, often defined as non-growth surface is possible. The high optical absorption coefficient and low cost of production of Cu2O thin films have they made good candidates for electrochromic devices, solar cells and oxygen sensors.
