LIBROS DEL AUTOR: emilio scalise

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  • Vibrational Properties of Defective Oxides and 2D Nanolattices
    Emilio Scalise
    Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future.This thesis is devoted to the first-principles modeling of the vibrational properties of these novel channel materials.The first part of the thesis focuses on the...
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    135,84 €