LIBROS DEL AUTOR: douglas weiser

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  • A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design
    Douglas Weiser
    Abstract:A process-based model (UFET) for deep-submicron bulk-silicon MOSFETs is developed and verified with numerical device simulations and measured data. The charge-based model is physical with accountings for the predominant short-channel (e.g., charge sharing, drain-induced threshold reduction and velocity saturation) and extremely scaled-technology (i.e., energy quantizat...
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