LIBROS DEL AUTOR: christain m morath

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  • Electrical Characterization of Non-Implanted 4h-Silicon Carbide
    Christain M. Morath
    Electrical characterization has been performed on p-type 4H-SiC implanted with Al or B to assess the activation efficiency and implantation-related damage recrystallization. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors in 4H-SiC with ionization energies of ~ 252 and ~ 285 meV, respectively. However, the de...
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